Growth of an InGaAs/Alingaas Mqw Non-Linear Etalon with Integrated 1.5μm GaInAsP/InP Epitaxial BRAGG Reflector

The Gas Source MBE growth of high quality GaInAsP/InP Bragg reflector stacks for operation at 1.5μm followed by growth of an MOVPE AlInGaAs/InGaAs MQW structure is demonstrated. An asymmetric Fabry-Perot non-linear etalon structure was completed by dielectric mirror deposition. A clear bistable response was observed for the device as a function of incident light intensity, with low critical switching power (