Diamond merged diode

Abstract To obtain high blocking voltages and low forward losses in power diode structures, a Schottky contact can be merged with a MIS contact or a pn-junction. In this configuration, the Schottky contact is responsible for a low forward threshold voltage and the MIS or pn-junction for a low reverse leakage current and a high breakdown voltage. In this study, a diamond merged diode structure has been fabricated and evaluated, containing simultaneously an Al or W:Si-Schottky contact and a boron/nitrogen pn-junction. The IV characteristics show a low forward barrier of 1.5 eV, a current rectification ratio of 10 9 at R.T., and a reverse breakdown at 2.5 MV/cm. Rectification has been obtained up to 1000 °C (in vacuum).