The exciton excitations and relaxation processes in low-dimensional semiconductor heterostructures with quantum wells

The processes associated with the transfer of excitonic excitations between tunnel-uncoupled quantum wells (QW) and the influence of the local electric field were investigated in AlGaAs/GaAs heterostructures by the method of photoluminescence excitation (PLE) spectroscopy at low (4.2 K) temperature. The variation in the intensity of photoluminescence (PL) from the wider QW under resonant excitation of excitonic transition in the adjacent narrow QW has been observed. The difference in the PL maximum position and intensity of the wider QW under resonance excitation of the narrow one is explained by the influence of quantum-confined Stark effect on the process of exciton recombination.