Negative bi-exciton binding energy in (211)B InAs/GaAs piezoelectric quantum dots

G.E. Dialynas,C. Xenogianni,E. Trichas,P. G. Savvidis,G. Constantinidis,Z. Hatzopoulos,N. T. Pelekanos

Negative bi-exciton binding energy in (211)B InAs/GaAs piezoelectric quantum dots

2007

G.E. Dialynas
C. Xenogianni
E. Trichas
P. G. Savvidis
G. Constantinidis
Z. Hatzopoulos
N. T. Pelekanos

We report on isolated dot spectroscopy of polar (211)InAs/GaAs quantum dots grown by MBE. Exciton and biexciton peaks have been identified, revealing a negative biexciton binding energy attributed to the presence of strong piezoelectric field.

Keywords:

Spectroscopy
Optoelectronics
Biexciton
Gallium arsenide
Physics
Photoluminescence
Condensed matter physics
Exciton
Quantum dot
Piezoelectricity
Binding energy

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