The analysis model of AlGaN/GaN HEMTs with electric field modulation effect

Luoyun Yang,Baoxing Duan,Ziming Dong,Yandong Wang,Yintang Yang

The analysis model of AlGaN/GaN HEMTs with electric field modulation effect

2019

Luoyun Yang
Baoxing Duan
Ziming Dong
Yandong Wang
Yintang Yang

This paper reviews the AlGaN/GaN HEMT devices with electric field modulation effects and proposes a uniform two-dimensional model of this type of devices. The surface electric field can be optimize...

Keywords:

Computer science
Computer vision
Artificial intelligence
Electric field
Optoelectronics
Modulation
High-electron-mobility transistor
electric field modulation
algan gan
Electric potential

Correction
Source
Cite
Save
Machine Reading By IdeaReader

References

Citations