Photocatalytic activity of Bi2O3 Nanocrystalline Semiconductor developed via Chemical-bath Synthesis

Abstract The present paper reports the development of semiconductor thin film by drop-casting Bi 2 O 3 particles, prepared through chemical bath method using Bi(NO 3 ) 3 as a precursor, followed by annealing at 600 °C. Band gap energy of 2.9 eV as calculated from the edge of the absorption spectra, indicates near visible absorptivity of the materials. Activity of the materials has been tested through linear sweep voltammetry under chopped illumination in 0.1 M Na 2 SO 4 solution for water oxidation and in 0.1 M Na 2 SO 3 solution for sacrificial oxidation. Highest photo-current density of 320 μAcm −2 has been measured for water oxidation reaction at 0.8 V vs. Ag/AgCl, under illumination of 35mWcm −2 . Electrochemical impedance and action spectra suggest significant photon to current conversion efficiencies of the material under UV-vis as well as for visible illumination. The efficacy of the semiconductor particles for decoloration of Rhodamine-B dye has been carried out spectrophotometrically, and it is observed that, within 40mins of exposure to light, the color of the dye faded significantly in presence of the photocatalyst.