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Minority Carrier Diffusion Length Influences from Oxygen-Induced Defects in Czochralski-Grown Silicon Substrates
Minority Carrier Diffusion Length Influences from Oxygen-Induced Defects in Czochralski-Grown Silicon Substrates
2012
B. Seipel
G. Grupp Mueller
T Weber
E.A. Good
Keywords:
Oxygen
Photoluminescence
Silicon
Materials science
Inorganic chemistry
Optoelectronics
Correction
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