Nanostructure and internal strain distribution in porous silicon.

: Porous silicon (PS) layers with different degrees of porosity have been fabricated and their nanostructure has been investigated using complementary methods as FE-SEM (field emission scanning electron microscopy), SAXS (small-angle X-ray scattering), and Raman spectroscopy. Correlation of these results with strain analyses is also required for envisaged applications in MEMS technology. Symmetrical and asymmetrical rocking curves obtained by high-resolution X-ray diffraction completed with reciprocal space maps (RSMs) explain the features observed in Raman spectra: the PS film in-depth contains two layers-bulk and highly strained superficial layer, between them being a graded strain layer.