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Acemap > Paper > Atomic layer deposition of highly-doped Er:Al 2 O 3 and Tm:Al 2 O 3 for silicon-based waveguide amplifiers (Conference Presentation)

Atomic layer deposition of highly-doped Er:Al 2 O 3 and Tm:Al 2 O 3 for silicon-based waveguide amplifiers (Conference Presentation)

2016 
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