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AlNパッシベーションを用いた10400V耐圧AlGaN/GaN HFET
AlNパッシベーションを用いた10400V耐圧AlGaN/GaN HFET
2008
daisuke sibata
takasi yosi matuo
syuuiti nagai
Ming Li
naohiro turumi
hidetosi isida
gaku yanagihara
yasuhiro uemoto
tetuzou ueda
tuyosi tanaka
daisuke ueda
Keywords:
Optoelectronics
Materials science
Electronic engineering
sapphire substrate
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