Analysis of Drain Current Variability Components in Extremely Narrow GAA Silicon Nanowire MOSFETs of 4nm Width

Drain current variability of 4nm-wide Gate-All-Around (GAA) Silicon Nanowire MOSFET is analyzed by decomposing into variability components. It is found that the nanowire drain current variability has similar compositions to FDSOI, with significant transconductance (Gm) impact which is ascribed to mobility and series resistance fluctuations due to nanowire width fluctuation and the absence of Random Dopant Fluctuation (RDF).