Implants of aluminum into silicon

Abstract The electrical behaviour of ion implanted aluminum into silicon was investigated by varying the beam energy in the 80 keV-6 MeV range, the dose in the 1 × 10 13 –1 × 10 14 /cm 2 range and the annealing procedure. Aluminum atoms precipitate into exten defects at the end of range damage and where the concentration exceeds the solid solubility value (about 2 × 10 19 /cm 3 at 1200°C Escape of Al atoms occurs very easily as soon as they reach the external surface during the thermal diffusion. Using high energy implants, 6 MeV, it was possible to follow in detail the broadening of the diffused profiles. The measured trends between the retained dose and the junction depth and between the outdiffused dose and the annealing time are quite well predicted by the solution of the diffusion equation with the surface acting as a perfect sink for the dopant.