Old Web
English
Sign In
Acemap
>
Paper
>
Adaptive Body Bias技術を用いたSOTB 2Mbit SRAMの0.37V超低電圧動作
Adaptive Body Bias技術を用いたSOTB 2Mbit SRAMの0.37V超低電圧動作
2014
yosiki yamamoto
hideki makiyama
tomohiro yamasita
syuuiti oda
sirou kanbara
nobuyuki sugii
yasuo yamaguti
tomoko mizutani
tosirou hiramoto
Keywords:
Static random-access memory
Silicon on insulator
Electronic engineering
Materials science
Computer science
Correction
Source
Cite
Save
Machine Reading By IdeaReader
0
References
0
Citations
NaN
KQI
[]