In‐plane‐gate transistors fabricated from Si/SiGe heterostructures by focused ion beam implantation

One‐dimensional in‐plane‐gate (IPG) transistors in the Si/Ge system are fabricated and characterized by focused ion implantation of Ga+ ions on lines into high‐mobility two‐dimensional electron gases confined in Si/SiGe heterostructures. Transistor operation is demonstrated up to temperatures of T=77 K. The depletion length of the FIB written lines and the saturation drift velocity of the electrons in the Si layer under tensile strain can be estimated from series of samples with different geometric widths of the channel. The IPG transistors presented here are the first based on Si, pushing this elegant transistor concept towards the important Si technology.