Investigation of nonlinear optical properties of ion-implanted and high-pulse laser deposition SiC:Ge: waveguide

The feasibility of using the combined advantage of ion implantation and laser ablation to form a waveguide has been investigated in SiC implanted with Oxygen 2 MeV wiht concentration of 2-3 × 10 17 ions/cm 2 and Au 2+ 2 MeV with concentration of 1x10 16 ions/cm 2 . Then a 2-micron Ge thin film was deposited on the surface with pulsed laser ablation to form a multilayer waveguide. It is shown that the waveguide acts as a laser wavelength differentiator under thermal stress achieving high selcitivy of wavelength in 9.6 micron using CO 2 laser. Electron paramagnetic results ffor this material will be presented as well to show the possible sites of doped and implanted ions.