Defect-free shallow P/N junction by point defect engineering

By taking advantage of high-stress SiN/sub x/ film as a source of vacancies, a defect-free shallow junction technology was developed by point defect engineering. By depositing the SiN/sub x/ film with high stress (1*10/sup 10/ dyn/cm/sup 2/) and annealing the sample, the vacancies were supplied from the SiN/sub x/-Si interface into the Si substrate to relax the stress of the SiN/sub x/ film and react with the extrinsic defect due to implantation. The density of the defects was then one order of magnitude lower than the sample without the SiN/sub x/ film. This technology is also useful for reducing the diffusion of dopant, which is controlled by the interstitial Si atoms. It was confirmed that the dopant profile of B+ was also shallower by about 10%. >