Self‐developing holographic recording in Li‐implanted Te thin films

Ablative holographic recording was performed on Li‐implanted Te thin films using a Nd:YAG laser. Implantation doses ranging from 2.9×1013 to 2.3×1015 ions/cm2 within the thin films were seen to produce an increase of the writing threshold by 20% and a reduction of the diffraction efficiency of the recorded gratings at the highest doses. For doses as low as 1.2×1014 ions/cm2, a considerable increase in the stability of the recording media has been observed.