Seeding lateral epitaxy of silicon on insulator with improved seed and cap structure by pseudoline shaped electron beam annealing

Seeding lateral epitaxy for silicon films on an insulator, using pseudoline shaped electron beam annealing, has been investigated. Higher oscillation frequency, higher beam scanning velocity, and suitable oscillation amplitude were effective to achieve large uniform silicon on insulator (SOI) films with the aid of simulating temperature distribution in silicon substrate. Furthermore, improved seed with tapered edge and capping layer of tungsten/insulator were employed to obtain 300 μm×1.3 mm single‐crystal SOI films on a 1.3‐μm SiO2 layer. Stacked SOI devices were successfully fabricated with low‐temperature planarization process. 218 ps/stage propagation delay and 17 pJ power‐delay product were obtained.