Effect of vapor phase composition on the properties of CVD 3C-SiC

We have studied the effect of silicon-enriched vapor phase composition, deposition temperature, and CH3SiCl3 precursor concentration on the microstructure, resistivity, and compressive strength of 3C-SiC layers and optimized the conditions for the growth of polycrystalline 3C-SiC layers possessing high resistivity and compressive strength.