Improvement of surface morphology and bulk structure of a-SiC:H films

Abstract The influence of gas flow and H 2 dilution ratio on the bulk and surface properties of a-SiC:H films is discussed. Infrared and electron spin resonance studies reveal that structural relaxation is achieved through control of surface reactions. On the other hand, the surface morphology as observed by atomic force microscopy is shown to be determined by growth rate under supply-limited conditions. This evidence implies that an improvement in bulk properties does not always lead to surface smoothening. Both surface reaction control and growth rate control are found to be crucial if films with excellent bulk and surface properties are to be obtained.