Dependence of turn-on and turn-off characteristics on anode/gate geometry of high-voltage 4H-SiC GTO thyristors

In this paper, we report static and switching characteristics of 1 kV and 3 kV 4H-SiC GTO thyristors with various anode-gate geometries. Measured switching results on two different anode geometries indicate the involute layout produces the fastest turn-on response while the concentric layout produces the fastest turn-off, as similar to silicon thyristors. Strong temperature dependence of both the static and switching characteristics of these GTOs has been observed and is attributed to acceptor ionization in the p/sup +/ anode and the increase of carrier lifetime with temperature.