Preparation of C60 Thin Film and Investigation of its Optical Properties

2011 
C60 thin films were deposited on Si substrates at different evaporation temperatures using the thermal evaporation method. In this paper, an extensive study of morphology and crystallinity of the films was presented by atomic force microscopy (AFM), low angle X-ray diffraction (LA-XRD) and UV-vis spectrophotometer. It is found that a good crystalline quality along a (333) preferred orientation was observed at the 450°C evaporation temperature and an ordered sequence of fcc structure was evaluated. The 2.24eV optical energy bandgag of C60 thin film corresponding to hu→ t1u transition between the highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) levels was also extracted.
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