Self-Organizing Growth of Silicon Dot- and Wire-Like Microcrystals on Isolated Substrates

Practical needs in Si-based superlattices and bulk circuits with high integration have initiated the intensive search for the new processes and technological approaches in SOI technologies (SIMOX, SIMNI, BISOI, including bounded-and-backside-etched and smart-cut technologies, etc.). Various kinds of etching techniques for bulk materials and/or films remain the key step in modern technologies. Etching generates a number of surface defects and gives rise to instabilities of the superstructures. In recent years an alternative resolving this problem has attracted much attention. Alternative methods are based on the ability of matter to self-organise. They involve creation of seeds for crystal growth and growing dot- or wire-like microcrystals, called whiskers. Like in the smartcut technology, these methods allow growing any type of microcrystals on any substrate. Although self-organising microcrystal growth on substrate (SOGMOS) has been used for the first time many years ago [1, 2] and suggested for application in the devices of vacuum [3] and quantum microelectronics [3, 4], there are still many unresolved problems in the technology and basic knowledge of these microcrystals.