Thermal ionization energy of Si and Mg in AlGaN

Compositional dependence of activation energies of Mg and also Si in AIGaN was obtained by the Hall effect measurements at various temperatures. Activation energies in AIGaN with AIN molar fraction less than 0.4 were characterized both theoretically and experimentally. The experimental result fits quite well for the Si donor with the hydrogen atom like model while that of Mg acceptor deviates downward from the model. In the p-type AlGaN, room temperature hole concentration of 1 x 10 17 cm -3 was achieved in Al x Ga 1-x N with x = 0.33.