Fabrication of ultrafast Si based MSM photodetector

The authors report on ultrafast metal-semiconductor-metal (MSM) photodetectors. The devices are manufactured on an epitaxial CoSi/sub 2/ ground plate on silicon, and uses single crystalline silicon as the photosensitive layer. The MSM photodiodes show an impulse response of up to 3.5 ps FWHM on (111) Si and 6.7 ps FWHM on (100) Si. An external quantum efficiency of 4.6% was measured.