Characterisation ofsemiconductor materials f ionising radiation detectors

Methods for the detection and characterisation of semiconductor material parameters and inhomogeneities are analysed. The peculiarities of different ‘‘classical’’ material and structure characterisation methods are discussed. The methods of lifetime and surface recombination mapping and electric field distribution in the samples are presented. Some results ofinvestigations ofGaAs, Si and SiC are used f the characterisation ofdif f