Band structure engineering of chemically tunable LnSbTe (Ln = La, Ce, Pr)

The ZrSiS family of compounds has garnered interest as Dirac nodal-line semimetals and offers an approach to study structural motifs coupled with electronic features, such as Dirac crossings. CeSbTe, of the ZrSiS/PbFCl structure type, is of interest due to its magnetically tunable topological states. The crystal structure consists of rare earth capped square nets separating the magnetic Ce–Te layers. In this work, we report the single crystal growth, magnetic properties, and electronic structures of LnSb1−xBixTe (Ln = La, Ce, Pr; x ∼ 0.2) and CeBiTe, adopting the CeSbTe crystal structure, and the implication of tuning the electronic properties by chemical substitution.The ZrSiS family of compounds has garnered interest as Dirac nodal-line semimetals and offers an approach to study structural motifs coupled with electronic features, such as Dirac crossings. CeSbTe, of the ZrSiS/PbFCl structure type, is of interest due to its magnetically tunable topological states. The crystal structure consists of rare earth capped square nets separating the magnetic Ce–Te layers. In this work, we report the single crystal growth, magnetic properties, and electronic structures of LnSb1−xBixTe (Ln = La, Ce, Pr; x ∼ 0.2) and CeBiTe, adopting the CeSbTe crystal structure, and the implication of tuning the electronic properties by chemical substitution.