Development of materials and processes for negative tone development toward 32-nm node 193-nm immersion double-patterning process
2009
A new negative tone imaging with application of new developer to conventional ArF immersion resist materials is proposed to form narrow trench and contact hole patterns, which is promising for double patterning process, since it is difficult to obtain sufficient optical image contrast to print narrow trench or contact hole below 60 nm pattern size with positive tone imaging. No swelling property in the developing step realized low LWR number at 32 nm trench patterns. Uniform de-protection ratio through the depth of resist film reduced cuspy resist pattern profile causing
micro-bridges at narrow trench pattern, and low frequency LWR number down to 2.4 nm. High resolution potential
was demonstrated with 38 nm dense S/L under 1.35 NA immersion exposure. Better CD uniformity and LWR number
of trench pattern were obtained by negative tone development (NTD) process with comparison to positive tone
development (PTD) process. Excellent defect density of 0.02 counts/cm 2 was obtained for 75 nm 1:1 S/L by
combination of 0.75 NA dry exposure and NTD process combination. NTD process parameters impacts to defectivity
were studied.
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