Thin film processing of multiferroic BiFeO3: From sophistication to simplicity. A review

Abstract The obtaining of BiFeO3 in the form of a thin film represents a critical issue for its application in electronic devices since this is the required geometry for the integration of this material in microelectronic circuits. There are several techniques for this purpose, from those that use a gas or plasma phase to transport the precursors to the substrate, which would be included within the PVD or CVD techniques (for its acronym Physical Vapor Deposition and Chemical Vapor Deposition) to those that use a phase liquid for this transport, which would be included under the CSD (Chemical Vapor Deposition) techniques. However, among the large number of published papers, there is much controversy about which of them would be most suitable. It has been clearly demonstrated that all of them have the sufficient capacity to produce uniform and homogeneous thin films in thickness throughout the entire substrate, and although in many articles pure BiFeO3 films have been obtained with an exploitable functional response, others have reported the typical drawbacks that usually entails the obtaining this material: appearance of secondary phases, high leakages or a poor functional response. Nevertheless, there is a common aspect in the specialized literature that seems to be in agreement: the first group of techniques require very sophisticated equipment that involves high energy consumption in terms of temperature and pressure (vaccum), while the techniques that are based on solutions are characterized by their higher simplicity. In this context, the purpose of the present review is to summarize the main aspects of each technique in the obtaining of BiFeO3 thin films, from those that are more sophisticated to the simplest and environmentally benevolent ones, in order to provide an easier understanding of them.