Synthesis and characterization of organosilicon compounds as novel precursors for CVD processes

Abstract Chemical vapor deposition using single-source organosilicon precursors is one of the most effective ways to produce multifunctional SiC x N y films. It is worth mentioning that the precursor molecule design affects both the composition and properties of films. Four organosilicon compounds containing a phenyl substituent (namely, trimethylphenylsilane, trimethyl(phenylamino) silane, trimethyl(benzylamino)silane and bis(trimethylsilyl)phenylamine) have been synthesized and characterized as potential CVD precursors for SiC x N y films synthesis. The compounds have been shown to be volatile and stable enough to be used in chemical vapor deposition of SiC x N y films. Thermodynamic modeling of the film deposition from the gaseous mixture of trimethylphenylsilane and ammonia in Si–C–N–H system has demonstrated that SiC x N y films can be deposited, and there is an opportunity to determine the area of appropriate deposition conditions.