Formation of Intensive Photoluminescence in Porous Silicon

V. A. Makara,M. S. Boltovets,O.V. Vakulenko,O. I. Datsenko,O. V. Rudenko

Formation of Intensive Photoluminescence in Porous Silicon

1995

V. A. Makara
M. S. Boltovets
O.V. Vakulenko
O. I. Datsenko
O. V. Rudenko

Photoluminescence (PL) spectra of porous silicon (PS) samples are studied. Effect of mechanical stresses in substrate on PL intensity is shown. The quantum yield (QY) of PS luminescence is estimated by comparing PL spectra of PS and rhodamine 6G.

Keywords:

Quantum yield
Porous silicon
Photoluminescence
Substrate (chemistry)
Inorganic chemistry
Rhodamine 6G
Materials science
Luminescence
Analytical chemistry
Spectral line
pl spectra

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