Super-thickness chemical thinning method for semiconductor wafer

The invention discloses a super-thickness chemical thinning method for a semiconductor wafer. The method comprises the following technical steps: preparing the front protection material of the wafer; placing a stainless steel disc serving as support material on a heating table, and uniformly spreading mixed molten wax and rosin on the stainless steel disc; placing the wafer on the heating table, and uniformly spreading the mixed molten wax and rosin on the wafer; sticking the front side of the wafer with the mixed molten wax and rosin and the stainless steel disc together, placing an etching control wafer on the edge of the wafer, and moving onto a cooling table for cooling; and putting the stainless steel disc stuck with the wafer in mixed acid for multiple corrosion until the corrosion thickness meets the requirement. The super-thickness chemical thinning method for the semiconductor wafer disclosed by the invention has the advantages of simple process, high thinning precision and the like.