Impact of SiON on embedded nonvolatile MNOS memory

We propose a new nonvolatile MNOS memory using SiON instead of SiN for embedded application, which has high performance and high reliability due to enhanced gate hole injection during erasure and better control of electron conduction in trapping materials during data retention. The increase in hole injection leads to fast and deep erase, which doubles the read-out current. Moreover, there is no erase degradation during program/erase cycling. The electron-conduction control significantly improves the data-retention characteristics, ensuring a 10-year retention lifetime at 180/spl deg/C.