Simulation of field-effect transistors and resonant tunneling diodes based on graphene

Graphene is a nanomaterial that due to unique properties has attracted great interest for various applications, in particular, for development of nanoelectronic devices. In the paper the graphene field-effect transistors (GFET) and resonant tunneling diodes (RTD) are analyzed with the use of proposed models. First, simulation of dual-gate field-effect transistor based on monolayer graphene with the use of proposed combined model is considered. In the model the following important factors such as quantum capacitance, hole and electron mobility difference, drain and source resistances are taken into account. Investigations of dependence of a drain current on drain voltage for various top-gate-to-source voltages are performed. Influence of channel length, source and drain resistances on output characteristics of the device is analyzed. Comparison of calculation results with simulation ones obtained with the known models was carried out. Secondly, simulation of graphene-based nanostructures on hexagonal boron nitride, silicon carbide and silicon dioxide substrates was performed using proposed self-consistent numerical model, based on effective wave function formalism. The developed models in detail were described in our previous works. The possibility of using a proposed self-consistent model for double- and triple-barrier graphene-based RTD simulation was illustrated. As well as it was investigated the influence of different parameters on IV-characteristics of graphene-based RTDs. It was shown that it is necessary to take into account extended (passive) regions for adequate simulation of these devices.