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GaN power FETs for next generation mobile communication systems
GaN power FETs for next generation mobile communication systems
2010
Musser
Walcher
Maier
Quay.
Dammann
Mikulla
Ambacher
Keywords:
Power MOSFET
High-electron-mobility transistor
Electricity generation
Mobile telephony
Gallium nitride
Electrical engineering
Logic gate
LDMOS
Microwave transmission
Computer science
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