Acoustoelectric effect with Rayleigh waves in a monolithic thin film lithium niobate on silicon heterostructure

We report on the first demonstration of acoustoelectric (AE) interaction in heterogeneously integrated Lithium Niobate thin film on Silicon substrate (LNOS). The strong coupling coefficient (K 2 ) delivers efficient excitation of Rayleigh waves, while the large permittivity and lower interface charge density of the LNOS configuration provides superior control of the semiconductor carrier density over previous approaches. Preliminary results suggest that the monolithic LNOS configuration can overcome past obstacles faced by AE technology, enabling a new era of AE-based nonreciprocal RF devices.