Study on thin SiC layer split by hydrogen implantation in SiC

Abstract A thin SiC layer split by H 2 implantation with an energy of 160 keV in SiC wafer has been studied by a new method of optical reflectance interference spectrometry (ORIS). The ORIS spectra revealed that thin SiC layer caused by microsplits is formed over almost whole region of the samples and the thickness of the thin SiC layer is about 630 nm for this implantation. The thickness split has been discussed in connection with the results of atomic force microscopy (AFM) and Rutherford backscattering spectrometry/channeling (RBS/C). The RBS/C measurements also indicated that the surface lattice defects of SiC due to H-implantation decreased by heat treatments.