Dual layer ZnO configuration over nanostructured porous silicon substrate for enhanced memristive switching

Abstract The performance of memristive devices has been investigated as a function of annealing temperature of zinc oxide (ZnO) thin films over porous silicon (PSi) in dual layer configuration. Electrical characterization demonstrates that nanostructured PSi substrate as well as ZnO layer configuration contributes effectively to an enhancement of the memristive ratio by a factor of 8. The effect of single and differently annealed double layer configuration of ZnO-PS produces continuous and abrupt switching respectively. Endurance test reveals a decrease in the switching ratio with an increase in the step size.