High-Speed Spatial Atomic-Layer Deposition of Aluminum Oxide Layers for Solar Cell Passivation

In this Communication we show that with spatially separated ALD of Al2O3 growth rates of 1.2 nm s-1 can be achievd, showing excellent surface passivation (surface recombination velocities of <2 cm s-1). This implies a revolutionary breakthrough in industrial throughput ALD of Al2O3 passivation of silicon solar cells.