Silicon oxide structures measured at the surfaces of silicon and silicate glass: a reflectivity study

Abstract Using a newly developed reflectometer we have measured the reflectivity of crystalline silicon and SiO x coated float glass at the silicon K absorption edge. The reflectometer can be used without the need for ultra high vacuum. The critical angle of total reflection was determined and the reflection as function of the energy was measured below the critical angle. EXAFS analysis of the data reveals the oxygen content in the samples, and the local structure around the silicon absorbers. The measurements show the strength of ReflEXAFS as a technique to study surfaces under “real” conditions.