Measurement fitted to silicon via electrical characteristics based on the measurement structure

The present invention discloses a measuring arrangement for measuring the electrical properties of the silicon-based vias to embedding. For the two-port and multi-port interconnection structures, and the test signal TSV structure perpendicular bisector of the line of centers arranged on the same side TSV isolation structure, the isolation structure for isolating TSV TSV structure perpendicular to the horizontal bottom surface of the test RDL electromagnetic coupling between the conductors, a metal mainly composed of silicon vias spaced posts; TSV structure isolation structure or as a combination of both inner and outer spacer spacer TSV structure inside space TSV TSV structure. The present invention relates to silicon via a conventional production process is fully compatible, suitable for measuring microwave experiment to test methods of embedding, a millimeter wave band electromagnetic characteristics TSV, compared with the conventional measuring method greatly improves the measurement accuracy, in the microwave measuring three-dimensional structure of the millimeter wave band field would be of great value.