Ultra shallow junctions formed by different pulse duration excimer lasers

Ultra shallow junctions were formed using boron implantation and KrF excimer laser annealing. Junction depth of 20 nm with sheet resistance of about 400 ohm/sq. was obtained at 700 mJ/cm/sup 2/ of the laser energy density and 33 ns of the laser pulse duration. Furthermore, we found that sheet resistance, junction depth and crystal defects in the junctions were affected by laser pulse duration.