Ultra-thin multi-element Si pin photodiode arrays for medical imaging applications

Results of comparative studies of opto-electrical properties of photodiode arrays built on 30-um, 75-um, and 100-um thick single Silicon dies are presented. The size of the square pixels varied from 1.5 mm to 250-um for different arrays with the gaps between adjacent elements as small as 20 um. The internal quantum efficiency was close to 100%, DC and AC cross talks were smaller than 0.01% within the spectral range 400 to 800 nm. The arrays were characterized with very low leakage currents and high shunt resistance - above 1 GΩhm. The features of the array structure are discussed for the first time.