/spl alpha/(6H)-SiC pressure sensors at 350/spl deg/C
1996
6H-SiC piezoresistive pressure sensors operational at 350/spl deg/C, with potential to operate up to 600/spl deg/C, were batch fabricated and tested. The full scale output (FSO) was 87.89 mV and 38.21 mV at 23/spl deg/C and 350/spl deg/C, respectively, at full scale pressure of 1000 psi. No serious degradation was observed when operated for ten hours at 308/spl deg/C. The temperature coefficient of resistance (TCR) was 1.52%/100/spl deg/C and 16%/100/spl deg/C at 140/spl deg/C and 350/spl deg/C, respectively. The temperature coefficient of gauge factor (TCGF) exhibited negative values of -26.1%/100/spl deg/C and -17.55%/100/spl deg/C at 140/spl deg/C and 350/spl deg/C, respectively. This work demonstrated batch manufacturing and operation of pressure sensors for temperatures beyond silicon technology.
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