An Injection Enhanced LIGBT on Thin SOI Layer with Low ON-state Voltage

A Lateral Injection Enhanced Insulated Gate Bipolar Transistor (LIEGT) on thin SOI layer is proposed and investigated by simulations. The LIEGT features a recessed trench at cathode side of the drift region formed by LOCOS process. The LIEGT shows very low loss in the ON-state because the trench suppresses holes being extracted and enhances the electron injection. The saturation current of the LIEGT is 1.4 times that of the conventional LIGBT and the ON-state voltage ( $\boldsymbol{V}_{\mathbf{ON}}$ ) is reduced by 24% at current density of 200A/cm2. The LIEGT exhibits improved trade-off between $\boldsymbol{V}_{\mathbf{ON}}$ and turn-off loss ( $\boldsymbol{E}_{\mathbf{OFF}}$ ). For the same $\boldsymbol{E}_{\mathbf{OFF}}$ , the $\boldsymbol{V}_{\mathbf{ON}}$ is decreased by 20% compared with that of the conventional LIGBT. The fabrication of the proposed LIEGT is compatible with the CMOS process.