The Research on the Microstructure and Electrical Properties of Nb2O5 Doped PBSFCZT Ceramics

In order to improve the electrical properties of PZT piezoelectric ceramic material, the effect of sintering temperature on the microstructure and electrical properties of the Nb2O5 doped PBFSZT ceramic material. The crystalline phase and microstructure of the PBSFCZT+0.5% Nb2O5 c eramic were analyzed at the different sintering temperatures (1120℃, 1150℃, 1180℃and 1210℃) by x-ray diffraction (XRD) and scanning electron microscopy (SEM) respectively. The results of the experiment show that the amounts of the Nb2O5 was 0.5%, the grain size of the PBSFCZT pi ezoelectric ceramic materials decreased correlated with the increasing of the sintering temperature. When the sintering temperature at 1180℃, the grain growths well and the grain-boundary intersection in tight, an excellent comprehensive electrical properties of the PBSZT ceramics material are as follows : e=3626, tanδ=1.7, d33=478PC/N, Kp=0.669. These results proved that appropriate softness doping can decrease the sintering temperature and improve the piezoelectric properties of the PBSFCZT ceramic material.