Novel Radiation-Hardened-by-Design (RHBD) 12T Memory Cell for Aerospace Applications in Nanoscale CMOS Technology

GUOJing,ZhuLei,LiuWenyi,HUANGHai,LiuShanshan,WangTianqi,XiaoLiyi,MaoZhigang

Novel Radiation-Hardened-by-Design (RHBD) 12T Memory Cell for Aerospace Applications in Nanoscale CMOS Technology

2017

GUOJing
ZhuLei
LiuWenyi
HUANGHai
LiuShanshan
WangTianqi
XiaoLiyi
MaoZhigang

In this paper, a novel radiation-hardened-by-design (RHBD) 12T memory cell is proposed to tolerate single node upset and multiple-node upset based on upset physical mechanism behind soft errors tog...

Keywords:

Upset
nanoscale cmos
Computer science
Electronic engineering
Radiation
Aerospace
Memory cell
single node

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