Correlation between two dielectric breakdown mechanisms in ultra‐thin gate oxides

The origin of stressing polarity dependence of charge‐to‐breakdown, Qbd, in thin SiO2 is discussed based on the temperature dependence of Qbd for both stressing polarities using wet and dry oxides. It was found that the temperature dependence of Qbd, which increases with decreasing temperature in the high temperature region and tends to saturate in the low temperature region, is identical irrespective of the stressing polarity and the oxidation condition. It has been proposed that the strain gradient from Si/SiO2 interface to SiO2/gate electrode interface determines directly both the Si–H bond density which dominates Qbd in high temperature region and the strained Si–O bond density which dominates Qbd in the low temperature region, irrespective of gate polarity and of oxidation condition.