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Analysis on trade-off between electric field and gate-drain capacitance for GaN HEMT by T-CAD simulation
Analysis on trade-off between electric field and gate-drain capacitance for GaN HEMT by T-CAD simulation
2012
Yutaro Yamaguchi
K. Hayashi
Toshiyuki Oishi
Hiroshi Otsuka
Koji Yamanaka
Masatoshi Nakayama
Yasuyuki Miyamoto
Keywords:
AND gate
Electric field
Materials science
Capacitance
High-electron-mobility transistor
Electronic engineering
CAD
Optoelectronics
Correction
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