A Comparative Study on the Parasitic Parameter Extraction Techniques for the Small-Signal Microwave Phemt Modeling

In this paper we overview the common parasitic extraction techniques that have been widely applied for the small-signal GaAs pHEMT modeling. Using the reviewed techniques and their combinations several small signal models have been built and compared in terms of accuracy. For the small-signal modeling we used the measured S-parameters of the 0.25 um GaAs pHEMT with a $\mathbf{6x50}\ \mathbf{um}$ total gate width. The values of S-parameters relative error for all the combinations of considered parasitic extraction techniques is provided. The most appropriate extraction flow of the parasitic capacitances, inductances and resistances is derived which results into the small-signal model with a total accuracy value less than 6%.